50ria series www.vishay.com vishay semiconductors revision: 23-apr-13 1 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 medium power phase control thyristors (stud version), 50 a features ? high current rating ? excellent dynamic characteristics ? dv/dt = 1000 v/s option ? superior surge capabilities ? standard package ? metric threads version available ? types up to 1200 v v drm /v rrm ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ? phase control applications in converters ? lighting circuits ? battery charges ? regulated power supplies and temperature and speed control circuit ? can be supplied to meet stri ngent military, aerospace and other high reliability requirements electrical specifications notes (1) units may be broken over non-repetitively in the off-state direction without damage, if di /dt does not exceed 20 a/s (2) for voltage pulses with t p ? 5 ms product summary package to-208ac (to-65) diode variation single scr i t(av) 50 a v drm /v rrm 100 v to 1200 v v tm 1.60 v i gt 100 ma t j - 40 c to 125 c to-208ac (to-65) major ratings and characteristics parameter test conditions values units i t(av) 50 a t c 94 c i t(rms) 80 a i tsm 50 hz 1430 a 60 hz 1490 i 2 t 50 hz 10.18 ka 2 s 60 hz 9.30 v drm /v rrm 100 to 1200 v t q typical 110 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage (1) v v rsm , maximum non-repetitive peak voltage (2) v i drm /i rrm maximum at t j = t j maximum ma 50ria 10 100 150 15 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300
50ria series www.vishay.com vishay semiconductors revision: 23-apr-13 2 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) available with dv/dt = 1000 v/s, to co mplete code add s90 i.e. 50ria120s90 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 sinusoidal conduction 50 a 94 c maximum rms on-state current i t(rms) 80 a maximum peak, one-cycle ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal ha lf wave, ? initial t j = t j maximum 1430 a t = 8.3 ms 1490 t = 10 ms 100 % v rrm ? reapplied 1200 t = 8.3 ms 1255 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 10.18 ka 2 s t = 8.3 ms 9.30 t = 10 ms 100 % v rrm ? reapplied 7.20 t = 8.3 ms 6.56 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied, ? t j = t j maximum 101.8 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.94 v high level value of threshold voltage v t(to)2 ( ? x i t(av) < i < 20 x ? x i t(av) ), t j = t j maximum 1.08 low level value of on-state ? slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 4.08 m ? high level value of on-state ? slope resistance r t2 ( ? x i t(av) < i < 20 x ? x i t(av) ), t j = t j maximum 3.34 maximum on-state voltage v tm i pk = 157 a, t j = 25 c 1.60 v maximum holding current i h t j = 25 c, anode supply 22 v, resistive load, ? initial i t = 2 a 200 ma latching current i l anode supply 6 v, resistive load 400 switching parameter symbol test conditions values units maximum rate of ? rise of turned-on current v drm ? 600 v di/dt t c = 125 c, v dm = rated v drm , ? gate pulse = 20 v, 15 ? , t p = 6 s, t r = 0.1 s maximum ? i tm = (2 x rated di/dt) a 200 a/s v drm ? 1600 v 100 typical delay time t d t c = 25 c, v dm = rated v drm , i tm = 10 a dc resistive circuit ? gate pulse = 10 v, 15 ? source, t p = 20 s 0.9 s typical turn-off time t q t c = 125 c, i tm = 50 a, reapplied dv/dt = 20 v/s ? dir/dt = - 10 a/s, v r = 50 v 110 blocking parameter symbol test conditions values units maximum critical rate of rise of ? off-state voltage dv/dt t j = t j maximum linear to 100 % rated v drm 200 v/s t j = t j maximum linear to 67 % rated v drm 500 (1)
50ria series www.vishay.com vishay semiconductors revision: 23-apr-13 3 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc ? ? triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10 w maximum average gate power p g(av) 2.5 maximum peak positi ve gate current i gm 2.5 a maximum peak positi ve gate voltage +v gm 20 v maximum peak negati ve gate voltage -v gm 10 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger current/voltage are the lowest ? value which will tr igger all units 6 v anode to cathode applied 250 ma t j = 25 c 100 t j = 125 c 50 dc gate voltage required to trigger v gt t j = - 40 c 3.5 v t j = 25 c 2.5 dc gate current not to trigger i gd t j = t j maximum, ? v drm = rated voltage maximum gate cu rrent/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 5.0 ma dc gate voltage not to trigger v gd t j = t j maximum 0.2 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction and ? storage temperature range t j , t stg - 40 to 125 c maximum thermal resistance, ? junction to case r thjc dc operation 0.35 k/w maximum thermal resistance, ? case to heatsink r thcs mounting surface, smooth, flat and greased 0.25 allowable mounting torque non-lubricated threads 3.4 + 0 - 10 % (30) n m (lbf in) lubricated threads 2.3 + 0 - 10 % (20) approximate weight 28 g 1.0 oz. case style see dimensions - link at the end of datasheet to-208ac (to-65) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.078 0.057 t j = t j maximum k/w 120 0.094 0.098 90 0.120 0.130 60 0.176 0.183 30 0.294 0.296
50ria series www.vishay.com vishay semiconductors revision: 23-apr-13 4 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ra tings characteristics fig. 2 - current ra tings characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 90 100 110 120 130 0 102030405060 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle 50ria series r (dc) = 0.35 k/w thjc 80 90 100 110 120 130 0 1020304050607080 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 50ria series r (dc) = 0.35 k/w thjc 0 10 20 30 40 50 60 70 80 0 1020304050 rms limit conduction angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) 50ria series t = 125c j 0 10 20 30 40 50 60 70 80 90 100 0 1020304050607080 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) 50ria series t = 125c j 600 700 800 900 1000 1100 1200 1300 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) at any rated load condition and with rated v applied following surge. rrm initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 50ria series 500 600 700 800 900 1000 1100 1200 1300 1400 1500 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t = 125c no voltage reapplied rated v reapplied rrm j 50ria series
50ria series www.vishay.com vishay semiconductors revision: 23-apr-13 5 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics fig. 9 - gate characteristics 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j 50ria series 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thj-hs steady state value r = 0.35 k/w thj-hs transient thermal impedance z (k/w) 50ria series 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 vgd igd (b) (a) tj=25 c tj=-40 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for tr<=1 s rectangular gate pulse rated di/dt : 20v, 30 ohms; tr<=0.5 s <=30% rated di/dt : 20v, 65 ohms (1) pgm = 10w, tp = 5ms (2) pgm = 20w, tp = 2.5ms (3) pgm = 50w, tp = 1ms (4) pgm = 100w, tp = 500s (3) (4) tj=125 c 50ria series frequency limited by pg(av)
50ria series www.vishay.com vishay semiconductors revision: 23-apr-13 6 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95334 1 - current code 2 - essential part number 3 - voltage code x 10 = v rrm (see voltage ratings table) 4 5 - none = stud base to-208ac (to-65) 1/4" 28unf-2a m = stud base to-208ac (to-65) m6 x 1 - critical dv/dt: none = 500 v/s (standard value) s90 = 1000 v/s (special selection) device code 5 13 24 50 ria 120 s90 m
document number: 95334 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 08-jul-08 1 to-208ac (to-65) outline dimensions vishay semiconductors dimensions in millimeters (inches) 5.1/7.6 (0.2/0.3) ? 4.1 (? 0.16) ? 1.5 (? 0.06) 3 min. (0.118 min.) 2.5/3.6 (0.1/0.14) ? 15 (? 0.59) 1/4"-28unf-2a for metric device m6 x 1 1.7/1.8 (0.06/0.07) 2.7 (0.106) 31 max. (1.22 max.) ? 19.2 (? 0.75) 10.7/11.5 (0.42/0.46) 22.4 max. (0.88 max.) 14.5 max. (0.57 max.) across flats 17.2/17.35 (0.67/0.68)
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